Topic - Clean / Conditioning

Title	Processes	Material	Chamber Principle	Chamber Hardware	Supplier	Topic
Process out of spec by corroded gas ring	Trench	Crystal Si	ICP	TCP®	LAM	Clean / Conditioning
Wet clean and conditioning check	Trench	Crystal Si	MERIE	HART TS	AMAT	Clean / Conditioning
Control of wet clean cycle by plasma parameters of dry clean		Polysilicon / a-Si	RIE			Clean / Conditioning
Conditioning optimization	Hard Mask Open	Oxide Nitride Sandwich	Dual Frequency	SCCM Oxide	TEL	Clean / Conditioning
Influence of shadow ring material		Nitride / Oxinitride	MERIE	MxP	AMAT	Clean / Conditioning
Dry clean and process stability improvement			ICP	DPS	AMAT	Clean / Conditioning
Removal of toxic residues before open the chamber ready?			ICP	TCP®	LAM	Clean / Conditioning
First wafer effect and prediction of etch profile variations	Gate etch	Oxide	ICP	TCP®	LAM	Clean / Conditioning
Improved chamber temperature stability	Trench	Oxide Nitride Sandwich	MERIE	HART	AMAT	Clean / Conditioning
De-conditioning by test wafer	Trench	Crystal Si	MERIE	HART	AMAT	Clean / Conditioning
Improve of warm-up	Trench	Crystal Si	MERIE	HART	AMAT	Clean / Conditioning
Investigation of STI-Etch Process with Hercules Sensor	STI	Resist	ICP	2300	LAM	Clean / Conditioning
ICC Development and Characterization			ICP	DPS	AMAT	Clean / Conditioning
FDC and WAC enhancement using plasma parameters	CVD	Oxide	ICP	Excelan	LAM	Clean / Conditioning