Title |
Processes |
Material |
Chamber Principle |
Chamber Hardware |
Supplier |
Topic |
|
Arcing in gas distribution | | | MERIE | MxP | AMAT | Maintenance |  |
Magnetic field failure | | | MERIE | MxP | AMAT | Maintenance |  |
Instable chamber pressure | | Oxide | MERIE | | AMAT | FDC |  |
Wet clean and conditioning check | Trench | Crystal Si | MERIE | HART TS | AMAT | Clean / Conditioning |  |
E-chuck fault | Trench | Crystal Si | MERIE | HART | AMAT | FDC |  |
Endpoint verification | | Oxide | MERIE | MxP+ | AMAT | Process Performance |  |
Implementation of in-situ Measurement Techniques for Plasma Processing | Trench | | Dual Frequency | HART | AMAT | Process Stability |  |
Particle in a CVD process | CVD | Oxide | HDP-CVD | Ultima | AMAT | FDC |  |
Hard mask erosion | Trench | Crystal Si | MERIE | | AMAT | Process Performance |  |
Instable process start with magnetic field | | | MERIE | | AMAT | Process Performance |  |
Parasitic plasma in He feedthrough | VIA etch | Oxide | MERIE | MxP+ | AMAT | FDC |  |
Open area shifts plasma parameters | VIA etch | Oxide | MERIE | MxP+ | AMAT | Process Performance |  |
Etch rate depends on matchbox | | | MERIE | MxP+ | AMAT | Maintenance |  |
B-field real time supervision | | | MERIE | | AMAT | Development |  |
Magnetic field and process stability | | | MERIE | | AMAT | Development |  |
Optimization of wet clean cycle | | Oxide | MERIE | MxP+ | AMAT | Productivity |  |
Influence of shadow ring material | | Nitride / Oxinitride | MERIE | MxP | AMAT | Clean / Conditioning |  |
Gas composition and process results | | Oxide | MERIE | MxP+ | AMAT | Process Performance |  |
Etch rate dependence on plasma parameters | VIA etch | Nitride / Oxinitride | MERIE | MxP+ | AMAT | Process Performance |  |
Contact angle (slope of side wall) depending on plasma parameters | | | MERIE | MxP+ | AMAT | Process Performance |  |
Dry clean and process stability improvement | | | ICP | DPS | AMAT | Clean / Conditioning |  |
Insensitive etch rate on test wafers | VIA etch | | MERIE | MxP+ | AMAT | Process Performance |  |
Tool and chamber long term matching | | Oxide | RIE | MxP+ | AMAT | Chamber Matching |  |
Improved chamber temperature stability | Trench | Oxide Nitride Sandwich | MERIE | HART | AMAT | Clean / Conditioning |  |
Chamber matching | Trench | Crystal Si | MERIE | HART | AMAT | Chamber Matching |  |
De-conditioning by test wafer | Trench | Crystal Si | MERIE | HART | AMAT | Clean / Conditioning |  |
Improve of warm-up | Trench | Crystal Si | MERIE | HART | AMAT | Clean / Conditioning |  |
Quality Management in large Area PECVD | CVD | Polysilicon / a-Si | PE-CVD | AKT | AMAT | Process Performance |  |
Uniformity and Process transfer | CVD | Polysilicon / a-Si | PE-CVD | AKT | AMAT | Development |  |
E-H-Mode transition and its detection in SF6 plasma | Trench | Crystal Si | ICP | DPS | AMAT | Process Stability |  |
PECVD Process Monitoring In Thin Film Silicon Solar Cell Manufacturing | CVD | Polysilicon / a-Si | PE-CVD | AKT | AMAT | Process Stability |  |
Chamber Matching of ICP Etch Chambers using RF Equipment Model | STI | | ICP | DPS | AMAT | Chamber Matching |  |
Process Stability in Photo Mask Manufacturing | Metal Etch | Metal | ICP | DPS | AMAT | Process Stability |  |
Analysis of DT Etch Plasma Problems using a SEERS Plasma Sensor | Trench | Crystal Si | ICP | DPS | AMAT | FDC |  |
ICC Development and Characterization | | | ICP | DPS | AMAT | Clean / Conditioning |  |
Implementation of a robust virtual metrology for plasma etching | Gate etch | Oxide | ICP | DPS | AMAT | Virtual Metrology |  |