| Title | Processes | Material | Chamber Principle | Chamber Hardware | Supplier | Topic | |
|---|---|---|---|---|---|---|---|
| Influence of shadow ring material | Nitride / Oxinitride | MERIE | MxP | AMAT | Clean / Conditioning | ![]() | |
| CD drift due to chamber heating | Nitride / Oxinitride | Dual Frequency | SCCM Oxide | TEL | Process Performance | ![]() | |
| Increased first wafer effect after PM from chamber heating | Stack | Nitride / Oxinitride | Dual Frequency | SCCM Oxide | TEL | Maintenance | ![]() |
| Etch rate dependence on plasma parameters | VIA etch | Nitride / Oxinitride | MERIE | MxP+ | AMAT | Process Performance | ![]() |