| Title |
Processes |
Material |
Chamber Principle |
Chamber Hardware |
Supplier |
Topic |
|
| Process out of spec by corroded gas ring | Trench | Crystal Si | ICP | TCP® | LAM | Clean / Conditioning |  |
| Favorable working point and process improvement | | Metal | ICP | TCP® | LAM | Development |  |
| Conditioning optimization after wet clean | | Oxide | ICP | TCP® | LAM | Productivity |  |
| Instable etch rate in lower pressure range | Stack | Polysilicon / a-Si | ICP | TCP® | LAM | Process Performance |  |
| Poly and nitride etch in one chamber - process stability and particle generation | | | ICP | TCP® | LAM | Process Stability |  |
| MFC fault detection | | Metal | ICP | TCP® | LAM | Process Stability |  |
| Product mix issue depending on chamber dedication | Stack | Polysilicon / a-Si | ICP | | LAM | Development |  |
| Resist mask causes process fault | Stack | | ICP | 2300 | LAM | Process Stability |  |
| Instable process caused by RF beat of source and bias power | | | ICP | TCP® | LAM | Process Stability |  |
| Process stability and critical pressure range | Trench | | ICP | TCP® | LAM | Process Performance |  |
| Baratron fault | Gate etch | | ICP | TCP® | LAM | FDC |  |
| Process control by wafer-to-wafer-difference | | | ICP | TCP® | LAM | Process Stability |  |
| Open area influences the process | Gate etch | Polysilicon / a-Si | ICP | TCP® | LAM | Process Stability |  |
| Dry clean and process stability improvement | | | ICP | DPS | AMAT | Clean / Conditioning |  |
| Removal of toxic residues before open the chamber ready? | | | ICP | TCP® | LAM | Clean / Conditioning |  |
| Remaining oxide after gate etch correlates with collision rate | Gate etch | Oxide | ICP | TCP® | LAM | Process Performance |  |
| First wafer effect and prediction of etch profile variations | Gate etch | Oxide | ICP | TCP® | LAM | Clean / Conditioning |  |
| Chamber matching at Sputter Clean Chamber | Sputter etch | Oxide | ICP | CSE / HSE | SPTS | Chamber Matching |  |
| E-H-Mode transition and its detection in SF6 plasma | Trench | Crystal Si | ICP | DPS | AMAT | Process Stability |  |
| Chamber Matching of ICP Etch Chambers using RF Equipment Model | STI | | ICP | DPS | AMAT | Chamber Matching |  |
| Maintenance and Optimization of Aviza HSE Sputter Etch Chmaber | Sputter etch | Metal | ICP | CSE / HSE | SPTS | Process Stability |  |
| Investigation of STI-Etch Process with Hercules Sensor | STI | Resist | ICP | 2300 | LAM | Clean / Conditioning |  |
| Process Stability in Photo Mask Manufacturing | Metal Etch | Metal | ICP | DPS | AMAT | Process Stability |  |
| Analysis of DT Etch Plasma Problems using a SEERS Plasma Sensor | Trench | Crystal Si | ICP | DPS | AMAT | FDC |  |
| ICC Development and Characterization | | | ICP | DPS | AMAT | Clean / Conditioning |  |
| Implementation of a robust virtual metrology for plasma etching | Gate etch | Oxide | ICP | DPS | AMAT | Virtual Metrology |  |
| FDC and WAC enhancement using plasma parameters | CVD | Oxide | ICP | Excelan | LAM | Clean / Conditioning |  |
| Fault Classification for Deep Si Etch | | Crystal Si | ICP | | SPTS | FDC |  |