Title | Processes | Material | Chamber Principle | Chamber Hardware | Supplier | Topic | |
---|---|---|---|---|---|---|---|
First wafer effect through idle time | VIA etch | Dual Frequency | IEM | TEL | Process Stability | ![]() | |
Parasitic plasma in He feedthrough | VIA etch | Oxide | MERIE | MxP+ | AMAT | FDC | ![]() |
Open area shifts plasma parameters | VIA etch | Oxide | MERIE | MxP+ | AMAT | Process Performance | ![]() |
Etch rate dependence on plasma parameters | VIA etch | Nitride / Oxinitride | MERIE | MxP+ | AMAT | Process Performance | ![]() |
Insensitive etch rate on test wafers | VIA etch | MERIE | MxP+ | AMAT | Process Performance | ![]() |