Title |
Processes |
Material |
Chamber Principle |
Chamber Hardware |
Supplier |
Topic |
|
Instable chamber pressure | | Oxide | MERIE | | AMAT | FDC |  |
Endpoint verification | | Oxide | MERIE | MxP+ | AMAT | Process Performance |  |
Particle in a CVD process | CVD | Oxide | HDP-CVD | Ultima | AMAT | FDC |  |
Yield loss detection | | Oxide | | | | Productivity |  |
Conditioning optimization after wet clean | | Oxide | ICP | TCP® | LAM | Productivity |  |
Parasitic plasma in He feedthrough | VIA etch | Oxide | MERIE | MxP+ | AMAT | FDC |  |
Open area shifts plasma parameters | VIA etch | Oxide | MERIE | MxP+ | AMAT | Process Performance |  |
Optimization of wet clean cycle | | Oxide | MERIE | MxP+ | AMAT | Productivity |  |
Stabilization of PECVD process by dry clean | CVD | Oxide | HDP-CVD | Speed | Novellus | Process Stability |  |
Gas composition and process results | | Oxide | MERIE | MxP+ | AMAT | Process Performance |  |
Remaining oxide after gate etch correlates with collision rate | Gate etch | Oxide | ICP | TCP® | LAM | Process Performance |  |
First wafer effect and prediction of etch profile variations | Gate etch | Oxide | ICP | TCP® | LAM | Clean / Conditioning |  |
Tool and chamber long term matching | | Oxide | RIE | MxP+ | AMAT | Chamber Matching |  |
Chamber matching at Sputter Clean Chamber | Sputter etch | Oxide | ICP | CSE / HSE | SPTS | Chamber Matching |  |
Process Stability Improvement on a Dual Frequency Etch Tool by Means of Plasma Parameters | | Oxide | Dual Frequency | Excelan | LAM | Process Stability |  |
Arcing detection and root cause analysis in low pressure PECVD | CVD | Oxide | PE-CVD | Speed | LAM | Arcing/Breakdown |  |
Implementation of a robust virtual metrology for plasma etching | Gate etch | Oxide | ICP | DPS | AMAT | Virtual Metrology |  |
FDC and WAC enhancement using plasma parameters | CVD | Oxide | ICP | Excelan | LAM | Clean / Conditioning |  |