Title |
Processes |
Material |
Chamber Principle |
Chamber Hardware |
Supplier |
Topic |
|
First wafer effect through idle time | VIA etch | | Dual Frequency | IEM | TEL | Process Stability | ![](/images/lupe.gif) |
Implementation of in-situ Measurement Techniques for Plasma Processing | Trench | | Dual Frequency | HART | AMAT | Process Stability | ![](/images/lupe.gif) |
Conditioning optimization | Hard Mask Open | Oxide Nitride Sandwich | Dual Frequency | SCCM Oxide | TEL | Clean / Conditioning | ![](/images/lupe.gif) |
Arcing indicated by collision rate | Hard Mask Open | Oxide Nitride Sandwich | Dual Frequency | SCCM Oxide | TEL | Maintenance | ![](/images/lupe.gif) |
Instable process - different levels in collision rate | Hard Mask Open | Oxide Nitride Sandwich | Dual Frequency | SCCM Oxide | TEL | FDC | ![](/images/lupe.gif) |
CD drift due to chamber heating | | Nitride / Oxinitride | Dual Frequency | SCCM Oxide | TEL | Process Performance | ![](/images/lupe.gif) |
Increased first wafer effect after PM from chamber heating | Stack | Nitride / Oxinitride | Dual Frequency | SCCM Oxide | TEL | Maintenance | ![](/images/lupe.gif) |
Process Stability Improvement on a Dual Frequency Etch Tool by Means of Plasma Parameters | | Oxide | Dual Frequency | Excelan | LAM | Process Stability | ![](/images/lupe.gif) |