| Title |
Processes |
Material |
Chamber Principle |
Chamber Hardware |
Supplier |
Topic |
|
| Endpoint verification | | Oxide | MERIE | MxP+ | AMAT | Process Performance |  |
| Parasitic plasma in He feedthrough | VIA etch | Oxide | MERIE | MxP+ | AMAT | FDC |  |
| Open area shifts plasma parameters | VIA etch | Oxide | MERIE | MxP+ | AMAT | Process Performance |  |
| Etch rate depends on matchbox | | | MERIE | MxP+ | AMAT | Maintenance |  |
| Optimization of wet clean cycle | | Oxide | MERIE | MxP+ | AMAT | Productivity |  |
| Gas composition and process results | | Oxide | MERIE | MxP+ | AMAT | Process Performance |  |
| Etch rate dependence on plasma parameters | VIA etch | Nitride / Oxinitride | MERIE | MxP+ | AMAT | Process Performance |  |
| Contact angle (slope of side wall) depending on plasma parameters | | | MERIE | MxP+ | AMAT | Process Performance |  |
| Insensitive etch rate on test wafers | VIA etch | | MERIE | MxP+ | AMAT | Process Performance |  |
| Tool and chamber long term matching | | Oxide | RIE | MxP+ | AMAT | Chamber Matching |  |