Title |
Processes |
Material |
Chamber Principle |
Chamber Hardware |
Supplier |
Topic |
|
Process out of spec by corroded gas ring | Trench | Crystal Si | ICP | TCP® | LAM | Clean / Conditioning | ![](/images/lupe.gif) |
Favorable working point and process improvement | | Metal | ICP | TCP® | LAM | Development | ![](/images/lupe.gif) |
Conditioning optimization after wet clean | | Oxide | ICP | TCP® | LAM | Productivity | ![](/images/lupe.gif) |
Instable etch rate in lower pressure range | Stack | Polysilicon / a-Si | ICP | TCP® | LAM | Process Performance | ![](/images/lupe.gif) |
Poly and nitride etch in one chamber - process stability and particle generation | | | ICP | TCP® | LAM | Process Stability | ![](/images/lupe.gif) |
MFC fault detection | | Metal | ICP | TCP® | LAM | Process Stability | ![](/images/lupe.gif) |
Instable process caused by RF beat of source and bias power | | | ICP | TCP® | LAM | Process Stability | ![](/images/lupe.gif) |
Process stability and critical pressure range | Trench | | ICP | TCP® | LAM | Process Performance | ![](/images/lupe.gif) |
Baratron fault | Gate etch | | ICP | TCP® | LAM | FDC | ![](/images/lupe.gif) |
Process control by wafer-to-wafer-difference | | | ICP | TCP® | LAM | Process Stability | ![](/images/lupe.gif) |
Open area influences the process | Gate etch | Polysilicon / a-Si | ICP | TCP® | LAM | Process Stability | ![](/images/lupe.gif) |
Removal of toxic residues before open the chamber ready? | | | ICP | TCP® | LAM | Clean / Conditioning | ![](/images/lupe.gif) |
Remaining oxide after gate etch correlates with collision rate | Gate etch | Oxide | ICP | TCP® | LAM | Process Performance | ![](/images/lupe.gif) |
First wafer effect and prediction of etch profile variations | Gate etch | Oxide | ICP | TCP® | LAM | Clean / Conditioning | ![](/images/lupe.gif) |