Chamber Hardware - TCP®

Title	Processes	Material	Chamber Principle	Chamber Hardware	Supplier	Topic
Process out of spec by corroded gas ring	Trench	Crystal Si	ICP	TCP®	LAM	Clean / Conditioning
Favorable working point and process improvement		Metal	ICP	TCP®	LAM	Development
Conditioning optimization after wet clean		Oxide	ICP	TCP®	LAM	Productivity
Instable etch rate in lower pressure range	Stack	Polysilicon / a-Si	ICP	TCP®	LAM	Process Performance
Poly and nitride etch in one chamber - process stability and particle generation			ICP	TCP®	LAM	Process Stability
MFC fault detection		Metal	ICP	TCP®	LAM	Process Stability
Instable process caused by RF beat of source and bias power			ICP	TCP®	LAM	Process Stability
Process stability and critical pressure range	Trench		ICP	TCP®	LAM	Process Performance
Baratron fault	Gate etch		ICP	TCP®	LAM	FDC
Process control by wafer-to-wafer-difference			ICP	TCP®	LAM	Process Stability
Open area influences the process	Gate etch	Polysilicon / a-Si	ICP	TCP®	LAM	Process Stability
Removal of toxic residues before open the chamber ready?			ICP	TCP®	LAM	Clean / Conditioning
Remaining oxide after gate etch correlates with collision rate	Gate etch	Oxide	ICP	TCP®	LAM	Process Performance
First wafer effect and prediction of etch profile variations	Gate etch	Oxide	ICP	TCP®	LAM	Clean / Conditioning