Title |
Processes |
Material |
Chamber Principle |
Chamber Hardware |
Supplier |
Topic |
|
First wafer effect through idle time | VIA etch | | Dual Frequency | IEM | TEL | Process Stability |  |
Implementation of in-situ Measurement Techniques for Plasma Processing | Trench | | Dual Frequency | HART | AMAT | Process Stability |  |
Poly and nitride etch in one chamber - process stability and particle generation | | | ICP | TCP® | LAM | Process Stability |  |
MFC fault detection | | Metal | ICP | TCP® | LAM | Process Stability |  |
Stabilization of PECVD process by dry clean | CVD | Oxide | HDP-CVD | Speed | Novellus | Process Stability |  |
Resist mask causes process fault | Stack | | ICP | 2300 | LAM | Process Stability |  |
Instable process caused by RF beat of source and bias power | | | ICP | TCP® | LAM | Process Stability |  |
Process control by wafer-to-wafer-difference | | | ICP | TCP® | LAM | Process Stability |  |
Open area influences the process | Gate etch | Polysilicon / a-Si | ICP | TCP® | LAM | Process Stability |  |
E-H-Mode transition and its detection in SF6 plasma | Trench | Crystal Si | ICP | DPS | AMAT | Process Stability |  |
Process Stability Improvement on a Dual Frequency Etch Tool by Means of Plasma Parameters | | Oxide | Dual Frequency | Excelan | LAM | Process Stability |  |
PECVD Process Monitoring In Thin Film Silicon Solar Cell Manufacturing | CVD | Polysilicon / a-Si | PE-CVD | AKT | AMAT | Process Stability |  |
Maintenance and Optimization of Aviza HSE Sputter Etch Chmaber | Sputter etch | Metal | ICP | CSE / HSE | SPTS | Process Stability |  |
Process Stability in Photo Mask Manufacturing | Metal Etch | Metal | ICP | DPS | AMAT | Process Stability |  |