Topic - Process Performance

Title	Processes	Material	Chamber Principle	Chamber Hardware	Supplier	Topic
Endpoint verification		Oxide	MERIE	MxP+	AMAT	Process Performance
Hard mask erosion	Trench	Crystal Si	MERIE		AMAT	Process Performance
Instable etch rate in lower pressure range	Stack	Polysilicon / a-Si	ICP	TCP®	LAM	Process Performance
Instable process start with magnetic field			MERIE		AMAT	Process Performance
Open area shifts plasma parameters	VIA etch	Oxide	MERIE	MxP+	AMAT	Process Performance
CD drift due to chamber heating		Nitride / Oxinitride	Dual Frequency	SCCM Oxide	TEL	Process Performance
Gas composition and process results		Oxide	MERIE	MxP+	AMAT	Process Performance
Etch rate dependence on plasma parameters	VIA etch	Nitride / Oxinitride	MERIE	MxP+	AMAT	Process Performance
Contact angle (slope of side wall) depending on plasma parameters			MERIE	MxP+	AMAT	Process Performance
Process stability and critical pressure range	Trench		ICP	TCP®	LAM	Process Performance
Remaining oxide after gate etch correlates with collision rate	Gate etch	Oxide	ICP	TCP®	LAM	Process Performance
Insensitive etch rate on test wafers	VIA etch		MERIE	MxP+	AMAT	Process Performance
Quality Management in large Area PECVD	CVD	Polysilicon / a-Si	PE-CVD	AKT	AMAT	Process Performance