Title | Processes | Material | Chamber Principle | Chamber Hardware | Supplier | Topic | |
---|---|---|---|---|---|---|---|
Instable etch rate in lower pressure range | Stack | Polysilicon / a-Si | ICP | TCP® | LAM | Process Performance | ![]() |
Product mix issue depending on chamber dedication | Stack | Polysilicon / a-Si | ICP | LAM | Development | ![]() | |
Resist mask causes process fault | Stack | ICP | 2300 | LAM | Process Stability | ![]() | |
Increased first wafer effect after PM from chamber heating | Stack | Nitride / Oxinitride | Dual Frequency | SCCM Oxide | TEL | Maintenance | ![]() |