Chamber Principle - MERIE

Title Processes Material Chamber Principle Chamber Hardware Supplier Topic  
Arcing in gas distribution  MERIEMxPAMATMaintenance
Gas composition and process results OxideMERIEMxP+AMATProcess Performance
Etch rate dependence on plasma parametersVIA etchNitride / OxinitrideMERIEMxP+AMATProcess Performance
Contact angle (slope of side wall) depending on plasma parameters  MERIEMxP+AMATProcess Performance
Magnetic field failure  MERIEMxPAMATMaintenance
Instable chamber pressure OxideMERIE AMATFDC
Wet clean and conditioning checkTrenchCrystal SiMERIEHART TSAMATClean / Conditioning
E-chuck faultTrenchCrystal SiMERIEHARTAMATFDC
Endpoint verification OxideMERIEMxP+AMATProcess Performance
Hard mask erosionTrenchCrystal SiMERIE AMATProcess Performance
Instable process start with magnetic field  MERIE AMATProcess Performance
Parasitic plasma in He feedthroughVIA etchOxideMERIEMxP+AMATFDC
Open area shifts plasma parametersVIA etchOxideMERIEMxP+AMATProcess Performance
Etch rate depends on matchbox  MERIEMxP+AMATMaintenance
B-field real time supervision  MERIE AMATDevelopment
Magnetic field and process stability  MERIE AMATDevelopment
Arcing at e-chuck  MERIE  FDC
Optimization of wet clean cycle OxideMERIEMxP+AMATProductivity
Influence of shadow ring material Nitride / OxinitrideMERIEMxPAMATClean / Conditioning
Insensitive etch rate on test wafersVIA etch MERIEMxP+AMATProcess Performance
Improved chamber temperature stabilityTrenchOxide Nitride SandwichMERIEHARTAMATClean / Conditioning
De-conditioning by test waferTrenchCrystal SiMERIEHARTAMATClean / Conditioning
Chamber matchingTrenchCrystal SiMERIEHARTAMATChamber Matching
Improve of warm-upTrenchCrystal SiMERIEHARTAMATClean / Conditioning