Chamber Principle - MERIE

Title	Processes	Material	Chamber Principle	Chamber Hardware	Supplier	Topic
Arcing in gas distribution			MERIE	MxP	AMAT	Maintenance
Magnetic field failure			MERIE	MxP	AMAT	Maintenance
Instable chamber pressure		Oxide	MERIE		AMAT	FDC
Wet clean and conditioning check	Trench	Crystal Si	MERIE	HART TS	AMAT	Clean / Conditioning
E-chuck fault	Trench	Crystal Si	MERIE	HART	AMAT	FDC
Endpoint verification		Oxide	MERIE	MxP+	AMAT	Process Performance
Hard mask erosion	Trench	Crystal Si	MERIE		AMAT	Process Performance
Instable process start with magnetic field			MERIE		AMAT	Process Performance
Parasitic plasma in He feedthrough	VIA etch	Oxide	MERIE	MxP+	AMAT	FDC
Open area shifts plasma parameters	VIA etch	Oxide	MERIE	MxP+	AMAT	Process Performance
Etch rate depends on matchbox			MERIE	MxP+	AMAT	Maintenance
B-field real time supervision			MERIE		AMAT	Development
Magnetic field and process stability			MERIE		AMAT	Development
Arcing at e-chuck			MERIE			FDC
Optimization of wet clean cycle		Oxide	MERIE	MxP+	AMAT	Productivity
Influence of shadow ring material		Nitride / Oxinitride	MERIE	MxP	AMAT	Clean / Conditioning
Gas composition and process results		Oxide	MERIE	MxP+	AMAT	Process Performance
Etch rate dependence on plasma parameters	VIA etch	Nitride / Oxinitride	MERIE	MxP+	AMAT	Process Performance
Contact angle (slope of side wall) depending on plasma parameters			MERIE	MxP+	AMAT	Process Performance
Insensitive etch rate on test wafers	VIA etch		MERIE	MxP+	AMAT	Process Performance
Improved chamber temperature stability	Trench	Oxide Nitride Sandwich	MERIE	HART	AMAT	Clean / Conditioning
Chamber matching	Trench	Crystal Si	MERIE	HART	AMAT	Chamber Matching
De-conditioning by test wafer	Trench	Crystal Si	MERIE	HART	AMAT	Clean / Conditioning
Improve of warm-up	Trench	Crystal Si	MERIE	HART	AMAT	Clean / Conditioning