Title |
Processes |
Material |
Chamber Principle |
Chamber Hardware |
Supplier |
Topic |
|
Process out of spec by corroded gas ring | Trench | Crystal Si | ICP | TCP® | LAM | Clean / Conditioning |  |
Wet clean and conditioning check | Trench | Crystal Si | MERIE | HART TS | AMAT | Clean / Conditioning |  |
E-chuck fault | Trench | Crystal Si | MERIE | HART | AMAT | FDC |  |
Implementation of in-situ Measurement Techniques for Plasma Processing | Trench | | Dual Frequency | HART | AMAT | Process Stability |  |
Hard mask erosion | Trench | Crystal Si | MERIE | | AMAT | Process Performance |  |
Process stability and critical pressure range | Trench | | ICP | TCP® | LAM | Process Performance |  |
Improved chamber temperature stability | Trench | Oxide Nitride Sandwich | MERIE | HART | AMAT | Clean / Conditioning |  |
Chamber matching | Trench | Crystal Si | MERIE | HART | AMAT | Chamber Matching |  |
De-conditioning by test wafer | Trench | Crystal Si | MERIE | HART | AMAT | Clean / Conditioning |  |
Improve of warm-up | Trench | Crystal Si | MERIE | HART | AMAT | Clean / Conditioning |  |
E-H-Mode transition and its detection in SF6 plasma | Trench | Crystal Si | ICP | DPS | AMAT | Process Stability |  |
Analysis of DT Etch Plasma Problems using a SEERS Plasma Sensor | Trench | Crystal Si | ICP | DPS | AMAT | FDC |  |