Processes - Gate etch

Title	Processes	Material	Chamber Principle	Chamber Hardware	Supplier	Topic
Baratron fault	Gate etch		ICP	TCP®	LAM	FDC
Open area influences the process	Gate etch	Polysilicon / a-Si	ICP	TCP®	LAM	Process Stability
Remaining oxide after gate etch correlates with collision rate	Gate etch	Oxide	ICP	TCP®	LAM	Process Performance
First wafer effect and prediction of etch profile variations	Gate etch	Oxide	ICP	TCP®	LAM	Clean / Conditioning
Implementation of a robust virtual metrology for plasma etching	Gate etch	Oxide	ICP	DPS	AMAT	Virtual Metrology