| Title |
Processes |
Material |
Chamber Principle |
Chamber Hardware |
Supplier |
Topic |
|
| Process out of spec by corroded gas ring | Trench | Crystal Si | ICP | TCP® | LAM | Clean / Conditioning |  |
| Wet clean and conditioning check | Trench | Crystal Si | MERIE | HART TS | AMAT | Clean / Conditioning |  |
| E-chuck fault | Trench | Crystal Si | MERIE | HART | AMAT | FDC |  |
| Hard mask erosion | Trench | Crystal Si | MERIE | | AMAT | Process Performance |  |
| Chamber matching | Trench | Crystal Si | MERIE | HART | AMAT | Chamber Matching |  |
| De-conditioning by test wafer | Trench | Crystal Si | MERIE | HART | AMAT | Clean / Conditioning |  |
| Improve of warm-up | Trench | Crystal Si | MERIE | HART | AMAT | Clean / Conditioning |  |
| E-H-Mode transition and its detection in SF6 plasma | Trench | Crystal Si | ICP | DPS | AMAT | Process Stability |  |
| Analysis of DT Etch Plasma Problems using a SEERS Plasma Sensor | Trench | Crystal Si | ICP | DPS | AMAT | FDC |  |
| Process Models for Gas Flow Reduction | | Crystal Si | RIE | | SPTS | Productivity |  |
| Fault Classification for Deep Si Etch | | Crystal Si | ICP | | SPTS | FDC |  |