HERCULES® C smartM
ROBUST
SENSOR for
MANUFACTURING CONTROL
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Quality Management
by Process Control
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Product:
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- Hercules® smartM C (10 - 40 MHz)
no DC bias or RF peak voltage measurement point required.
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Applications:
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- Routine manufacturing control
- Quality control
- Faults Detection and Classification
- Conditioning (seasoning) control
- Chamber matching
- Virtual Metrology
- Pre-process fault detection
- Product monitoring
- Maintenance
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Parameters:
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- Electron
collision rate as effective collision rate for momentum
transfer
including stochastic heating
- Electron
density is calculated by a complete model with a reduced
model
with given (predetermined) sheath thickness. Systematic deviations are
possible,
the repeatability is not concerned.
- Sheath
width (fixed)
- RF
current (1st harmonic)
- Asymmetry, the ratio of sheath voltage at the chamber wall to sheath
voltage at the wafer - Electron SheathHeating equals the net energy of electrons per cycle
over maximum energy of electrons
- RF peak
voltage estimated form a given sheath width
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Measurement range:
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- Electron density:
109 - 1011 cm-3
- Electron collision rate: 107
- 5 109 s-1
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Pressure range:
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- Depends on gas, reactor geometry, and RF power
- Upper limit: typical 35 Pa (260 mTorr), 50
Pa (380 mTorr) for the most electropositive gases
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Pre-conditions:
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- Cylindrical chamber geometry
- Flange above wafer in process position, not in shadow
of other parts
- Well grounded chamber wall and liner
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Etch and PECVD:
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Model:
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Flexible
and small:
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- appr. 4 kg
- H: 210 mm, D: 250 mm, W: 210 mm
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Data
analysis and process control:
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Interface:
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- SEMI 54.24 (Modbus® TCP)
- Lam® Plug and Play
(optional)
- SECS/HSMS (optional via Hercules®
Master)
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