CHAMBER MATCHING

  Chamber Matching of ICP etch chambers using RF equipment model

• Simple approach: Measurement at operating frequency:
• Fast and easy → first results immediately available
• Limited accuracy, some parameters are not measurable this way.
• Advanced approach: Impedance spectroscopy:
• Characterization of RF components by using broad a frequency range
• Advantage of outstanding accuracy.
• Impedance spectroscopy enables the usage of RF equipment models.

  After corrective actions

• After the corrective actions have been implemented, the STI etch rates harmonized significantly. This effect is clearly visible in the endpoint charts and process etch time charts.