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    PLASMA PROCESS CONTROL
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    HERCULES® N smartM

    ROBUST SENSOR for MANUFACTURING CONTROL

    HerculesSmartM.png

        Quality Management by Process Control


    Product:



    • Hercules® smartM N (10 - 40 MHz)
      no DC bias or RF peak voltage measurement point required.

    Applications:

    • Routine manufacturing control
    • Quality control
    • Faults Detection and Classification
    • Conditioning (seasoning) control
    • Chamber matching
    • Virtual Metrology
    • Pre-process fault detection
    • Product monitoring
    • Maintenance

    Parameters:

    • Plasma resistivity, normalized
    • Resonance frequency
    • Unformity edge
    • RF current (1st harmonic)

    Measurement range:

    • Resitivity: 0.01 ... 10
    • Resonance frequency: 10 ... 50 MHz

    Pressure range:

    • Depends on gas, reactor geometry, and RF power
    • Lower limit: typical 50 Pa (380 mTorr)

    Pre-conditions:

    • Cylindrical chamber geometry
    • Flange above wafer in process position, not in shadow of other parts
    • Well grounded chamber wall and liner

    Chambers:

    • Classical PECVD chambers

    Model:

    • Non-iterative NEED algorithm with low pressure extension

    Flexible and small:

    • appr. 4 kg
    • H: 210 mm, D: 250 mm, W: 210 mm

    Data analysis and process control:

    Interface:


    Subject to technical alternations!

    • SEMI 54.24 (Modbus® TCP)
    • Lam® Plug and Play (optional)
    • SECS/HSMS (optional via Hercules® Master)