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    First Wafer Effect

    FDC

    Pre-process Issuses

    Chamber Matching

    Process Development


    Hercules® Products



    Hercules® SmartM C



    Sensor heads for different etch and deposition tools
    Data analyse with HercViewer or HercLotViewer
    Data Coupling     with FAB host
    Data Management by Hercules® Master

    Sensor installation and base lining at least one wet clean cycle



    Easy decision making, fast response to process faults,
    saving tool up-time, test wafers, and spare parts


    In case of tricky issues please use
    the Plasmetrex process services around all plasma problems
    including plasma training of your employees.


    Hercules® Products

    Base systems


    Process relatedExtensions


    Etch
    (low pressure)1

    Hercules® SmartM C
    1. High-sensitivity plasma parameters SheathHeating and Asymmetry
    2. Bias power extension for layer quality control for Etch or CVD, control of LF bias power control


    PECVD / HDP
    (low pressure)1

    Hercules® SmartM C
    1. High-sensitivity plasma parameters SheathHeating and Asymmetry
    2. Bias power extension for layer quality control for Etch or CVD, control of LF bias power control


    PECVD
    (high pressure)2

    Hercules® SmartM N
    1. Bias power extension for layer quality control for Etch or CVD, control of LF bias power control



    1 up to 35 Pa (250 mTorr)
    2 60 Pa - 1 kPa (430 mTorr - 7.5 Torr)

    Subject to technical alternations!