• APPLICATION GUIDE
    OTHER

    CONDITIONING GUIDE: EXAMPLES

    Plasma parameters indicate sucess of wet clean

    The plasma parameters of conditioning procedure indicate the wet clean success immediately by:

    The diagram below indicates normal conditioning:

    		 Plasma parameters are unstable with irregular magnitude changes compared to the diagram on the left:
    Successful wet clean Wet clean failure
    Plasma parameters:
    Indicator of successful wet clean.    		 Plasma parameters: 
    Indicator of wet clean failure.

    Conditioning affects process stability:
    Stable conditioning Bad conditioning
    Stable conditioning  -->  stable process.

    Conditioning fault --> instable processing.

    Chamber Matching
    Goal: Bring a new chamber into a similar conditioning state to yield the same processing result as other  chambers.

    Chamber mismatch: Chambers have reached different steady states of chamber wall deposition.

    Example of poor chamber matching as indicated by the collision rate (for several conditioning cycles):
    Chamber A: stable Chamber C: instable
    Chamber A: Stable Chamber C: Unstable

    Deconditioning by wrong procedure

    Depending on the process, a proper conditioning procedure must be applied.

    Select of suitable material for conditioning wafers is important !

    Example: Metal Etch Process

    The use of blanc Si wafers can lead to a deconditioning, which can be seen in the collision rate:

    		 Conditioning procedure

    Use a suitable conditioning procedure !