The plasma parameters of conditioning procedure indicate the wet clean success immediately by:
|The diagram below indicates normal conditioning:
||Plasma parameters are unstable with irregular magnitude changes compared to the diagram on the left:|
Indicator of successful wet clean.
Indicator of wet clean failure.
|Conditioning affects process stability:|
|Stable conditioning --> stable process.||
Conditioning fault --> instable processing.
chamber into a similar conditioning state to yield the same processing
result as other chambers.
Chamber mismatch: Chambers have reached different steady states of chamber wall deposition.
Example of poor chamber matching as indicated by the collision rate (for several conditioning cycles):
|Chamber A: Stable||Chamber C: Unstable|
Depending on the process, a proper conditioning procedure must be applied.
Select of suitable material for conditioning wafers is important !
Example: Metal Etch Process
The use of blanc Si wafers can lead to a deconditioning, which can be seen in the collision rate:
Use a suitable conditioning procedure !