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Plasmetrex Strategy and Roadmap
M. Klick – Plasmetrex GmbH
Hercules®
- Tool for Technology Improvement and Fault Detection @ Micron`s Etch
Chambers
R. Benson, et.al. – Micron Technology, Inc.
Hercules®
inside commercial FDC System Maestria
D. Föh – Micronas GmbH
Simulation
of the SEERS Diagnostic Method - New
Analysis ans new Results
R.-P. Brinkmann – Ruhr-University Bochum
SEEERS under Industrial Conditions
M. Klick – ASI Advanced Semiconductor Instruments GmbH
Modelling and Simulation of SEERS
R.P. Brinkmann, Th. Mussenbrock – Ruhr - University Bochum
Diagnostics of plasma-particle interaction by SEERS and other methods
H. Kersten – INP Greifswald
Process stability by SEERS at Micronas
D. Föh – Micronas
HERCULES® APC
xM - SEERS Implementation for the New Tool Generation
M. Klick – ASI Advanced Semiconductor Instruments GmbH
Basic
of SEERS Implementation at Hercules®
Measurement
System
M. Klick – ASI GmbH
Simultaneous Measurement of Electron Density and Electron Temperature
in Highly Reactive Capacitively Coupled Plasma
G. Franz – Infineon Technologies München, et al.
Use of Data Mining Techniques for Model Based Data Analysis of Plasma
Parameters, Electrical Data and Yield in High Volume DRAM Production
U. Nehring – Infineon Technologies Dresden
New Simulations about SEERS
P. Brinkmann – University Bochum, et al.
SEERS Diagnostics at Plasmas used in Powder Processing
H. Kersten – University Greifswald, et al.
Measurement of Electron Collision Rate and Electron Density at Pulsed
R.F.-Plasma
R.-D. Schulze – BAM, et al.
Application Examples of SEERS at DRAM Production
on 300 mm Wafers
V. Tegeder - Infineon Technologies Dresden, et al.
Overview of SEERS Application at AMD
Müller – AMD Dresden
Application of Plasma Parameters to Advanced Process Control
A. Steinbach – Infineon Technologies Dresden
Characterization
of a Plasma with SEERS by an Aaluminium-Etch
M. Schardin – Infineon Technologies Dresden, et al.
Recent Status of SEERS Application at Infineon Regensburg
K. Reingruber – Infineon Technologies Regensburg
Arcing
Prevention by Dry Clean Optimization using Plasma Parameter Monitoring
M. Hartenberger – BTU Cottbus, et al.
Tool Comparison at GC Stack Etch in LAM®
TCP® using
Plasma Parameters (SEERS)
C. Steuer – TU Dresden
Application of Plasma Parameters to characterize Product Interactions
between Memory and Logic Products at Gate Contact (GC) Stack Etch in
LAM ® TCP ®
T. Dittkrist – TU Dresden
Comparison of APPLIED MATERIALS DPS™ Chambers used for Poly -
Si Etch Processes by Plasma Parameters
Christoph – Infineon Technologies Dresden
Investigations on two different Plasma Tools by SEERS, OES and
Electrical Measurements
J.-K. Bauer – TU Dresden
Concepts of Plasma Data Analysis and Equipment Coupling
D. Suchland – ASI GmbH
Development Roadmap of SEERS Implementations
M. Klick - ASI GmbH
Simulation of Plasma Processes for Mikroelectronics
Fabrication
R. P. Brinkmann – Infineon Technologies München, et
al.
Investigation of Cl2 / BCl3
- Plasmas with SEERS and Optical Spectroscopy
G. Franz –Infineon Technologies München, et
al.
Investigation of SF6 Plasma at ICP Chamber of
the STS ASE Tool with SEERS
T. Haase – Fraunhofer IMS Dresden
Process and Tool Monitoring at Metal Etch in LAM®TCP®
P. Höhmann – Infineon Technologies Regensburg, et
al.
On the Plasma Modification of Micro-disperse Powder Particles
H. Kersten – University Greifswald, et al.
Application of the Plasma Monitoring System
HERCULES ® on
Process Monitoring of Oxide Etch
at APPLIED MATERIALS ®
MxP+™
Chamber
A. Steinbach – Infineon Technologies Dresden, et
al.
Business and technical Roadmap of HERCULES®
M. Klick – ASI GmbH
Application of HERCULES®
for Engineering and Maintenance
A. Steinbach – Infineon Technologies Dresden, et
al.
Setup and Integration of the Plasma Monitoring System HERCULES® PL at 300 mm
APPLIED MATERIALS®
Centura and first Results
V. Tegeder – Semiconductor 300 Dresden