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Semiconductor Plasma Process Sensor
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Total Process Control Solution
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Plasma Control Concept
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RF Chamber Matching
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2016 © Plasmetrex GmbH

HERCULES® C 500/1000

ROBUST SENSOR for MANUFACTURING CONTROL

Hercules C




Download of specification:

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Quality Management by Process Control

Quality management by process control

 

Product:

  • Hercules® C 500 (10 - 35 MHz)
  • Hercules® C 1000 (10 - 70 MHz)
    no DC bias or RF peak voltage measurement point required.

Applications:

  • Routine manufacturing control
  • Quality control
  • Faults Detection and Classification
  • Conditioning (seasoning) control
  • Chamber matching
  • Virtual Metrology
  • Pre-process fault detection
  • Product monitoring
  • Maintenance

Parameters:

  • Electron collision rate as effective collision rate for momentum transfer
    including stochastic heating
  • Electron density is calculated by a complete model with a reduced model
    with given (predetermined) sheath thickness. Systematic deviations are possible,
    the repeatability is not concerned.
  • Sheath width (fixed)
  • RF current (1st harmonic)
  • RF peak voltage estimated form a given sheath width

Measurement range:

  • Electron density: 109 - 1011 cm-3
  • Electron collision rate: 107 - 5 109 s-1

Pressure range:

  • Depends on gas, reactor geometry, and RF power
  • Upper limit: typical 35 Pa (260 mTorr), 50 Pa (380 mTorr) for the most electropositive gases

Pre-conditions:

  • Cylindrical chamber geometry
  • Flange above wafer in process position, not in shadow of other parts
  • Well grounded chamber wall and liner
  • For full performance: RF peak voltage value for ECS; otherwise DC bias for
    anodized chamber surface

Etch and CVD:

Model:

Flexible and small:

  • 4.5 kg
  • H: 210 mm, D: 250 mm, W: 210 mm
  • 19" rack compatible

Data analysis and process control:

Interface:

  • Modbus® TCP
  • Lam® Plug and Play (optional)
  • SECS/HSMS (optional via Hercules® Master)

TOOLweb®:
(MKS BlueBox)

  • optional

Subject to technical alternations!