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APPLICATION PAPERS

 

2014 - 2013 - 2012 - 2011 - 2010 - 2009 - 2008 - 2007 - 2006 - 2005 - 2004 - 2003 - 2002 - 2001 - 2000 - 1999 - 1998

2014

An effective Procedure for Sensor variable Selection and Utilization in Plasma etching for Semiconductor Manufacturing
Kye Hyun Baek, Thmas F. Edgar, Kiwook Song, Gilheyun Choi, Han Ku Cho, Chonghun Han
Samsung Electronics Co. Ltd

Process Stability in Photo Mask Manufacturing
M. Baessler, H. Rolff, A. Lajn, Advanced Mask Technology Center
14 th European APCM Conference, April, 2014, Rome, Italy

Development of a Plasma Etch insitu Chamber Clean (ICC) and Analysis of Etch Plasma Problems using a SEERS Plasma Sensor
R. Wagner, H. Richter, E. Chasanoglou, Texas Instruments Deutschland GmbH,
14 th European APCM Conference, April, 2014, Rome, Italy

Plasma monitoring and PECVD process control in thin film silicon-based solar cell manufacturing
Onno Gabriel, Simon Kirner, Michael Klick, Bernd Stannowski, and Rutger Schlatmann
EPJ Photovoltaics 5, 55202 (2014)

2013

Process Stability Improvement on a Dual Frequency Etch Tool by Means of Plasma Parameters
D. Föh, Micronas GmbH, Freiburg, Germany
13 th European APCM Conference, April, 2013, Dresden, Germany
Please contact us via mail in case of interest.

E-H-Mode Transition and its Detection in SF6 Plasma during Si Trench Etch
E. Chasanoglou, Texas Instruments, Freising, Germany
13 th European APCM Conference, April, 2013, Dresden, Germany
Please contact us via mail in case of interest.

Combined PECVD Process Sensors in Thin Film Silicon-Based Solar Cell Manufacturing
O. Gabriel,  PVcomB, Helmholtz-Zentrum Berlin,  Germany
13 th European APCM Conference, April, 2013, Dresden, Germany
Please contact us via mail in case of interest.


2012

Maintenance and Optimization of Aviza HSE Sputter Etch Chamber
Gernot Bauer, Texas Instruments Deutschland GmbH, Robert Fischer, Texas Instruments Deutschland GmbH, Michael Klick, Plasmetrex GmbH
10 th European APCM Conference, April, 2012, Grenoble, France
Please contact us via mail in case of interest.

Chamber characterization and predictive maintenance of PECVD chamber
Michael Klick, Plasmetrex GmbH, Percy Heger, 2Infineon AG Dresden,
10 th European APCM Conference, April, 2012, Grenoble, France
Please contact us via mail in case of interest.

Chamber Matching of ICP etch chambers using RF equipment model
R. Wagner, Texas Instruments Deutschland GmbH1, et al.
10 th European APCM Conference, April, 2012, Grenoble, France
Please contact us via mail in case of interest.

PECVD Process Monitoring in Thin Film Silicon Solar Cell Manufacturing Onno Gabriel, PVcomB/Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Berlin, et al.
10 th European APCM Conference, April, 2012, Grenoble, France
Please
contact us via mail in case of interest.

2011

Chamber Matching at Sputter Clean Chambers with Inductively Coupled Plasma
N. Urbansky, Infineon Technologies Dresden, Germany, et. al. 10 th European APCM Conference, April, 2011, Dresden, Germany
Please contact us via mail in case of interest.

Investigation of STI-Etch Process with Hercules Sensor
A. Gümpel, J. Liefke, Infienon Dresden,  Germany, et. al. Semicon Conference, 2011, Dresden, Germany
Please contact us via mail in case of interest.

Chamber matching and spare parts influence in III-V plasma etching
H.P. Maucher, United Monolithic Semiconductors GmbH, Ulm,Germany, et. al. 10 th European APCM Conference, April, 2011, Dresden, Germany
Please contact us via mail in case of interest.

2010

Smart Spare Part Management And Chamber Matching In III-V Plasma Etching
H.P.Maucher, United Monolithic Semiconductors GmbH, Ulm, Germany
10 th AEC/APC Symposium, October, 2010, Austin, TX, USA
Please contact us via mail in case of interest.

Deployment of Plasma Parameters for FDC in Metal Etch
D. Föh, Micronas GmbH
10 th European AEC/APC Conference, April, 2010, Catania, Italy
Please contact us via mail in case of interest.

Quality Management by Advanced Process Control in Large Area PECVD
M. Klick, L. Eichhorn, R. Rothe, Plasmetrex GmbH
10 th European AEC/APC Conference, April, 2010, Catania, Italy

Influence of the Top Chamber Window Temperature on the STI Etch Process
D. Shamiryan, E. Danilkin, S. Tinck, M. Klick, A. Milenin, M.R. Baklanov, T.W. Boullart
ECS Transcations, 27 (1) 731 - 736 (2010)
Please contact us via mail in case of interest. 

2008

Enhanced process metrology using plasma parameters in FDC
D. Föh, Micronas GmbH
Solid State Technology, June 2008

Virtual Metrology using Advanced Plasma Sensor and Multivariante Model for Etch Rate Prediction
M. Klick, R. Rothe, L. Eichhorn, Plasmetrex GmbH
th European AEC/APC Conference, April, 2008, Tel_Aviv, Israel

2007

Deployment of Plasma Parameters for FDC in Etch
D. Föh, Micronas GmbH
8 th European AEC/APC Conference, April, 2007, Dresden, Germany

Technology Improvement and Fault Detection @ TCP Etch Chamber and a Dual Frequency Oxide Etch Chamber
R. Benson, et.al., Micron Technology, Inc
8 th European AEC/APC Conference, April, 2007, Dresden, Germany

Requirements on Sensors for new Plasma Tools
M. Klick, et.al. Plasmetrex GmbH
8 th European AEC/APC Conference, April, 2007, Dresden, Germany

2006

Poster: The Integration of Add-on Sensors into the Manufacturing Tool Environment - Recent Models and Future Needs
D. Suchland, Advanced Semiconductor Instruments GmbH
th European AEC/APC Conference, March, 2006, Aix-en-Provence, France

The Integration of add-on Sensors into the Manufacturing Tool Environment - recent Models and future Ne eds Oxide Etch Chamber
D. Suchland, Advanced Semiconductor Instruments GmbH
th European AEC/APC Conference, March, 2006, Aix-en-Provence, France

Process Development and Control for Silicon Trench Etching using Plasma Parameters
F. Session, Fairchild Semiconductor, M. Klick, M. Bernt, Advanced Semiconductor Instruments GmbH
th European AEC/APC Conference, March, 2006, Aix-en-Provence, France

2005

Electron heating in capacitively coupled discharges and reactive gases
G. Franz, et al. – Munich University of Applied Sciences
J.VAC.SCI.TECHNOL.B23(4)2005,917

Please contact us via mail in case of interest.

Application of in-situ Plasma Measurement Techniques on Etch Hardware Desgn and Process Development for 60 nm Structures
A. Steinbach, et al. – Infineon Technologies Dresden
6th European AEC/APC Conference, April, 6, 2005, Dublin, Irland

Economical benefits by new plasma tool concepts and AEC/APC
L. Eichhorn, et al. – ASI Advanced Semiconductor Instruments GmbH
6th European AEC/APC Conference, April, 6, 2005, Dublin, Irland

Electron Heating and Process Characterization in Reactive Low-pressure Plasmas
G. Franz, et al. – Munich University of Applied Sciences
6th European AEC/APC Conference, April, 6, 2005, Dublin, Irland

Systematic Method to Optimize Conditioning Process through Real Time Plasma Monitoring
K. H. Baek, et al. – SAMSUNG ELECTRONICS Co., LTD.,
International Symposium on Semiconductor Manufacturing, Paris, 2005
ISSM 2005, Volume , Issue , 13-15 Sept. 2005 Page(s): 129 - 131

Please contact us via mail in case of interest.

Chamber mainteanance and fault detection technique for a gate etch process via self-excited electron resonance spectroscopy
K. H. Baek, et al. – SAMSUNG ELECTRONICS Co., LTD.,
J.VAC.SCI.TECHNOL.B23(1)2005,126

Please contact us via mail in case of interest.

2004

Enhanced Chamber Management and Fault Detection in Plasma Etch Processes via SEERS
K. H. Baek – SAMSUNG ELECTRONICS Co., LTD.
International Sematech AEC/APC Symposium XVI 2004, USA

Implementation of in-situ Measurement Techniques for Plasma Processing
A. Steinbach – Infineon Technologies Dresden
5th European AEC/APC Conference, April, 13, 2004, Dresden, Germany

Sensor Interface based on Ethernet/IP as Network Communication Standard SEMI E54.13
D. Suchland – ASI Advanced Semiconductor Instruments GmbH
5th European AEC/APC Conference, April, 13, 2004, Dresden, Germany

Wet Clean and Maintenance Monitoring of Plasma Etch Tools by Plasma Parameter Measurement
R. M. Wolf, et al. – Infineon Technologies Dresden
5th European AEC/APC Conference, April, 13, 2004, Dresden, Germany

Analysis of Capacitively Coupled Chlorine - Containing Discharges
G. Franz – University of Applied Sciences, Munich
5th European AEC/APC Conference, April, 13, 2004, Dresden, Germany

The Application of Plasma Parameters for Process Control: Multi Plasma Regime
M. Klick– ASI Advanced Semiconductor Instruments GmbH, Berlin
5th European AEC/APC Conference, April, 13, 2004, Dresden, Germany

Process Characterization Improvement by Plasma Parameters at TELīs 300 mm SCCM Etch Chamber
K. Allan, et al. – Infineon Technologies Dresden
5th European AEC/APC Conference, April, 13, 2004, Dresden, Germany

2003

Monitoring of Process Stability and Chamber Matching by Plasma Parameter Measurement using High Speed-SEERS
A. Steinbach, S. Barth – Infineon Technologies Dresden
4nd European AEC/APC Conference , March, 26–28, 2003, Grenoble, France

2002

LAM® TCP® 9400 PTX Silicon Trench Etch Process Monitoring for Fault Detection and Classification
T. Pardue, M. Klick – Fairchild Semiconductor, ASI Advanced Semiconductor Instruments GmbH
AEC/APC Symposium XIV, September, 7–12, 2002, Utah, USA

Plasma Monitoring under Industrial Conditions for Semiconductor Technologies
M. Klick – ASI Advanced Semiconductor Instruments GmbH
ESCAMPIG 16, ICRP5, I-375, July, 14–18, 2002, Grenoble, France

Application of Self Excited Electron Plasma Resonance Spectroscopy for Advanced Process Control of Plasma Etch Process
A. Steinbach – Infineon Technologies Dresden
ISSM International Symposium on Semiconductor Manufacturing, October, 15–17, 2002, Japan

Importance of in-situ Measurement Techniques for Advanced Process Control of Plasma Processing in High Volume Production
A. Steinbach – Infineon Technologies Dresden
3rd European AEC/APC Conference, April, 10–12, 2002, Dresden

Application of Plasma Parameter Measurement by SEERS on Oxide Etch Process Development for New DRAM Shrink Generations in APPLIED MATERIALS ® EMAX™ Chamber
M. Hartenberger (University of Cottbus), P. Moll, A. Steinbach (Infineon Technologies Dresden)
3rd European AEC/APC Conference , April, 10–12, 2002, Dresden

Tool- and Process Comparison of 200 mm- and 300 mm-Si Plasma Etch Processes by Optical Emission Spectroscopy and Self Excited Electron Plasma Resonance Spectroscopy
S. Bernhard, A. Steinbach (Infineon Technologies Dresden)
3rd European AEC/APC Conference, April, 10–12, 2002, Dresden

Application of Plasma Parameter Measurement using SEERS on increase of Mean Time Between Cleans at Collar Etch in APPLIED MATERIALS® MxP+™
M. Hartenberger (University of Cottbus), F. Hoffmann, S. Bernhard,  A. Steinbach (Infineon Technologies Dresden)
3rd European AEC/APC Conference, April, 10–12, 2002, Dresden

Long-term Stability and FDC of Plasma Parameters for Trench Si Etching Using Lam® TCP® 9400 PTXT.
Pardue (Fairchild Semiconductor), M. Klick (ASI GmbH)
3rd European AEC/APC Conference, April, 10–12, 2002, Dresden

III-V Semiconductor Etching - Plasmadiagnostics with SEERS.

Technical Report, Heribert Zull, Osram Opto Semiconductors, June 2002 



2001

The tremendous Impact of APC for Plasma Etch - Advanced Process Control
V. Tegeder – Infineon Technologies SC300, Dresden, Germany, 
R. Ronchi, STMicroelectronics, Rousset, France,
S. Mueller, M. Hofmann, AMD Saxony, Dresden
Solid State Technology, October, 2001

Application of SEERS to real time Plasma Monitoring in Production at differrent FABs
V. Tegeder – Infineon Technologies Dresden
Sematech AEC/APC Symposium XIII, 2001, USA

Application of Electrical Plasma Measurement Techniques at Advanced Process Control
A. Steinbach – Infineon Technologies Dresden
2nd European AEC/APC Conference, April, 18–20, 2001, Dresden

Application of Plasma Parameters to characterize Product Interactions between DRAM and Logic Products at Gate Contact (GC) Stack Etch in LAM® TCP®
T. Dittkrist – University of Technology Dresden, et al.
2nd European AEC/APC Conference, April, 18–20, 2001, Dresden

Arcing Prevention by Dry Clean Optimization at Shallow Trench Isolation (STI) Etch in APPLIED MATERIALS®MxP™ by Use of Plasma Parameters
M. Hartenberger – University of Cottbus, et al.
2nd European AEC/APC Conference, April, 18–20, 2001, Dresden

Application of Advanced Data Processing Techniques for Single Process Parameters and Electrical Data for Product Engineering Purposes
U. Nehring – Infineon Technologies Dresden, et al.
2nd European AEC/APC Conference, April, 18–20, 2001, Dresden

Plasma Parameters - Time Resolved Investigations down to 0.001 ms inside cyclic Pulses of pulsed RF-Plasma by modified SEERS
Rolf-Dieter Schulze, Joerg F. Friedrich, Bundesanstalt für Materialforschung und -pruefung Berlin 
VIth International Workshop on Plasma-Based Ion Implantation (PBII - 2001), June 26- 28, 2001 - Grenoble, France

2000

Supervision of Plasma-Etch-Processes at different Tool Types
V. Tegeder – Infineon Technologies Dresden
Sematech AEC/APC Symposium XII, 2000, USA

Use od Data Mining for Model Based Data Analysis of Plasma Parameters and Electrical Data in High Volume DRAM Production
U. Nehring – Infineon Technologies Dresden
Sematech AEC/APC Symposium XII, 2000, USA

1999

Plasma Monitoring System HERCULES® for real time plasma etch control
A. Steinbach – Infineon Technologies Dresden
Sematech AEC/APC Symposium XI 1999, USA  

Real Time Plasma Etch Control by means of Physical Plasma Parameters with HERCULES®
A. Steinbach –Infineon Technologies Dresden, et al.
Proc. of the Symposium on Microelectronic Manufacturing Technologies, Edinburgh, May 19–21, 1999, United Kingdom

SEERS-based process control and plasma etching
S. Wurm, Siemens AG Semiconductors, Muenchen, Germany, W. Preis, Siemens AG Semiconductors, Regensburg, Germany, M. Klick, ASI GmbH, Berlin, Germany
Solid State Technology, 1999, June, p. 103

1998

Plasma Etch Control by means of Physical Plasma Parameter Measurement with HERCULES®
A. Steinbach – Infineon Technologies Dresden, et al.
Sematech AEC/APC Symposium X 1998, USA